Chemical-mechanical planarization (cmp) pad conditioner brush-and-abrasive hybrid for multi-step, preparation- and restoration-conditioning process of cmp pad

ABSTRACT

A multi-step conditioning process includes an initial step of preparation (i.e., pre-conditioning) and a subsequent step of restoration (i.e., conditioning and polishing intermittently, in situ conditioning, or combinations thereof). An example of such an enhancement is achieved using a CMP pad conditioner brush-and-abrasive hybrid that has a combination of brush bristles and abrasive elements. The abrasive elements are readily deployed for pre-conditioning as the brush bristles are pressed (flexed) so that they are not in use. And the brush bristles are readily deployed for conditioning during pad restoration as less downforce is applied to the conditioner. Thus, a universal hybrid conditioner is capable of alteration of its aggressiveness without physically changing a conditioner on a polisher tool.

TECHNICAL FIELD

The present disclosure relates generally to conditioning of chemical-mechanical planarization (CMP) polishing pads and, more particularly, to CMP pad conditioners having brush bristles and abrasive regions.

BACKGROUND INFORMATION

Manufacture of high-performance solid state devices requires an extremely precise and clean completion of a series of unit operations. One series of unit operations refines surfaces created and manipulated in the manufacture of solid state devices. Surfaces created in the manufacture of solid state devices must meet rigid quality control criteria that include a minimizing of irregularities from one point on the surface to another. Irregularities are characterized by deviations in topography over the surfaces or by transient chemical reactions, such as an undesirable oxidation reaction on a surface. Polishing the surfaces having the irregularities is one operation used to remove the irregularities.

One polishing operation is a CMP, also called chemical-mechanical polishing. This polishing (or planarizing) operation produces a desired surface topography by simultaneous performance of chemical etching with an etchant and mechanical buffing with an abrasive. In other words, it is a hybrid of chemical etching and free abrasive polishing.

The CMP operation is used to treat a surface of a silicon wafer. Specifically, wafers are mounted on rotating holders and lowered onto a pad surface that is rotated in an opposite direction to the rotating holders. A slurry of a silica abrasive suspended in a chemical etchant such as potassium hydroxide or ammonium hydroxide is applied to the pad. Polishing action of the pad mechanically removes the oxide or metal layers continuously, until the set thickness of the layer, as determined by process parameters, is reached. The goal of the process is to achieve local and global wafer planarization without creating any surface defects.

The CMP operation is also usable in the manufacture of an integrated circuit or a circuit section such as a metallized layer that is supported by a silicon wafer. Complex integrated circuits include multi-level metallized layers or patterns. These metallized layers are part of a dense circuit design, with a variable topography and a material mix. This type of dense design is enhanced by planarization of the metallic components, which allows precise imaging on the layers by photolithography, and which reduces thinning.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side elevation view of a wafer polishing apparatus applying first and second downforces (F₁ and F₂) through a polisher assembly and a pad conditioning assembly, shown partly fragmented, the pad conditioning assembly showing a cutaway view of a hybrid conditioner of FIGS. 2-5 mounted to an end effector of the pad conditioning assembly.

FIG. 2 is a bottom plan view of the conditioner brush-and-disk hybrid (i.e., combination of brush and abrasives) of FIG. 1, according to a first embodiment having brush bristles that are substantially straight in a nominal, uncompressed configuration.

FIG. 3 is an enlarged cross-sectional view of the conditioner of FIGS. 1 and 2 taken along lines 3-3 of FIG. 2.

FIGS. 4 and 5 are enlarged cross-sectional views of the conditioner of FIG. 1 subjected to, respectively, first and second downforces (F₃ and F₄) successively applied by the pad conditioning assembly to the conditioner during a multi-step, preparation- and restoration-conditioning process of a CMP pad.

FIG. 6 is an enlarged cross-sectional view of a hybrid conditioner, according to a second embodiment having angled or slanted brush bristles designed to flex laterally upon application of a downforce, applied during pre-conditioning (e.g., FIG. 4), that is less than that applied to the embodiment of FIGS. 1-5 having substantially straight brush bristles.

FIG. 7 is a block diagram showing x- and y-force components (F_(x) and F_(y)) of a downforce (F₅) acting on a brush bristle of the non-straight brush bristle design of FIG. 6

FIGS. 8, 9, and 10 are statistical plots and data tables showing experimental results of pre-conditioning using an abrasive conditioner at various downforces and pre-conditioning durations.

FIGS. 11, 12, and 13 are linear regression graphs showing extrapolations predicting times to reach target values of roughness parameters, including arithmetic average of absolute values (Ra) and root mean squared (Rq), for pre-conditioning at the downforces and associated conditions of FIGS. 8, 9, and 10.

FIG. 14 is a graph showing a time savings in achieving target pad surface roughness by using a conditioner disk, at various downforces, during pre-conditioning.

DETAILED DESCRIPTION OF EMBODIMENTS

Initially, the following terminology is used in this disclosure to describe types of conditioning of a CMP pad: preparation and restoration. Pad preparation, which is also referred to as pad pre-conditioning or simply pre-conditioning, means using a conditioner on a CMP pad preparatory to (i.e., before) a CMP polishing process so as to normalize a new CMP pad's morphology and surface and thereby establish a baseline condition suitable for a workpiece. Pad restoration means to remove debris formed during the polish and thereby rejuvenate the pad surface. Restoration may be performed between cycles (or sequential stages) of a wafer CMP polishing process, or it may be performed simultaneously with the wafer CMP polishing. When performed with the wafer CMP polish, the restoration is referred to as in situ pad conditioning or simply in situ conditioning.

CMP pad conditioners are referred to as conditioner tools or simply conditioners. Such conditioners are usually shaped as disks including brush bristles, one or more abrasive ceramic regions or regions of another rigid abrasive material, or some combination of bristles and abrasives. Generally, the abrasive-type conditioner tools are referred to as conditioner disks or simply disks, whereas brush-type conditioner tools are referred to as conditioner brushes (not to be confused with post-CMP brushes to clean wafers after the CMP process).

A typical conditioner brush design contains a polymer or plastic composite base with elastic or flexible (usually a kind of polymeric material, i.e., nylon) bristles that perform conditioning across uneven pad topography. A typical conditioner disk design contains a ceramic base with the pedestals mounted on the base. Outer surfaces of the pedestals are covered with abrasive diamond films, available in various degrees of roughness, deposited in various ways. Conditioning begins when a diamond film is in contact with a pad surface, as shown in FIG. 1.

FIG. 1 shows a polishing apparatus 10 used to planarize a thin film layer formed over a semiconductor substrate. During planarization, an upper surface of a table 20 carries a polishing pad 21, which is fixedly attached to table 20. A shaft 22 attached to a backside of a carrier 23, also known as a quill, applies a downforce pressure F₁—typically on the order of five pounds-force per square inch (PSI) or 34473.8 Pascal (Pa)—against the backside of a silicon substrate 25 that is thereby forced face-down on a confronting surface of pad 21.

Carrier 23 holds the backside of substrate 25 in contact with the bottom of carrier 23 by a vacuum or simply by wet surface tension. An insert pad 27 cushions substrate 25 from carrier 23. A retaining ring 26 is employed to prevent substrate 25 from slipping laterally from beneath carrier 23 during processing.

Pad 21 may comprise a relatively hard polyurethane, or similar material, capable of transporting abrasive particulate matter such as silica particles. The pressure of F₁ is used to facilitate the abrasive polishing of a surface of the thin film. In this manner, the thin film to be polished is placed in direct contact with the upper surface of pad 21. Shaft 22 may also rotate to impart rotational movement to substrate 25 as a dispenser 28 applies a slurry to pad 21. The slurry, as well as rotational movement, enhances the polishing process.

Additionally, a pad conditioning assembly 30 is provided for conditioning pad 21. Pad conditioning assembly 30 comprises a conditioner arm 32 in which one end of arm 32 is coupled by a joint 34 to an end effector 36. End effector 36 helps to ensure that a bottom surface 37 of a conditioner brush-and-abrasive hybrid 50 is uniformly in contact with pad 21 when undulations in pad 21 are present. The weight of pad conditioning assembly 30, as well pressure applied by mechanical means such as motors or other actuators, provides a downward force F₂ of a predetermined process-specific PSI discussed subsequently in this disclosure.

Conditioners are available in different levels of aggressiveness in which the desired level of aggressiveness depends on the type of design (e.g., brushes are typically less aggressive than ceramics) intended for a specific CMP process. For example, conditioner disks of various degrees of aggressiveness are typically used for conditioning solid polymeric polishing pads, such as a IC1000υ pad available from The Dow Chemical Company of Midland, Mich., whereas conditioner brushes are typically used for conditioning highly porous poromeric pads, such as a POLITEX™ pad, also available from Dow.

Some CMP processes perform pre-conditioning using the same conditioner tool that is also used for in situ conditioning. But under such processes, pre-conditioning entails significant tool time because a less abrasive conditioner (e.g., one that is suitable for restoration) is also being used to achieve a suitable pre-conditioned state after a prolonged pre-conditioning treatment. On the other hand, using a more aggressive conditioner for pre-conditioning reduces overall conditioning time, but it may be too aggressive for later restoration. Accordingly, some CMP processes include a change of conditioner from more to less aggressive abrasiveness between, for example, the steps of pad preparation and restoration.

Changing conditioner tools entails stopping a polishing tool, removing a previously installed tool, replacing it with a new tool, and continuing the CMP process with the new tool. Thus, manual tool changes by the technician include retooling and technician delays. Tool-time loss can be as high as 30 to 60 minutes. And that time lost may actually offset any time saved by using different tools for the different steps of a CMP process. In other words, change of aggressiveness from one application to another entails physical replacement of the conditioner of one type with the conditioner of another type on the polishing tool. Physical replacement of the conditioner disks or conditioner brush on the polishing tool entails stopping of the tool and manual operations, such as unscrewing/screwing multiple screws to and from a conditioner holder or end effector.

This disclosure contemplates enhancements of a multi-step conditioning process including an initial step of preparation (i.e., pre-conditioning) and a subsequent step of restoration (i.e., intermittently conditioning and polishing, in situ conditioning, or combinations thereof). One example enhancement is achieved using a CMP pad conditioner brush-and-abrasive hybrid that has a combination of brush bristles and abrasive elements. The abrasive elements are readily deployed for pre-conditioning as the brush bristles are pressed (or otherwise flexed) such that they are not in use on a pad. But the brush bristles are still readily deployed for conditioning during pad restoration when they are not pressed out of use as less downforce is applied to the conditioner. Thus, a universal hybrid conditioner is capable of alteration of its aggressiveness without physically changing a conditioner on a polisher tool.

This disclosure describes a conditioner of a hybrid design that allows changing conditioner aggressiveness during a multi-step CMP-pad conditioning process without replacing the conditioner between steps. In one embodiment, aggressiveness can also be modulated during the process, e.g., during in situ conditioning. This feature of the hybrid conditioner saves significant tool time otherwise wasted during physical replacement of the conditioner of one type with the conditioner of another type and provides additional flexibility of the CMP conditioning process. Physical replacement of the currently used conditioner, e.g., to change conditioner aggressiveness, is not needed because a hybrid conditioner allows changing aggressiveness in situ or with a simple operation by the operator. Thus, the combination of the functions of a conditioner disk and conditioner brush in one conditioner provides significant saving of tool time and increase of tool availability. This capability of the hybrid conditioner also accelerates the CMP process, increases the useful life of CMP conditioner consumables, and provides for fine-tuning for various CMP processes.

FIGS. 2 and 3 show conditioner hybrid 50 that includes elements of brushes 60 and abrasive regions 70 in a single conditioner tool, which creates additional capabilities not available separately in conditioner tools having only brushes or disks. FIG. 3 shows in greater detail a rigid (e.g., ceramic) base 74 and abrasive regions (i.e., cylindrical pedestals 80), and a brush base 86 and bristles 90. Bristles 90 are formed of substantially discrete fibers, each generally depending from brush base 86 in a substantially consistent direction along its entire length; i.e., uncompressed fibers do not twist backward, curl, or web as in some types of matted brushes. The height of brush bristles 90 is also taller than that of pedestals 80. Polymer/composite base 86 of the conditioner brush is attached to ceramic base 74 of conditioner hybrid 50 by, for example, adhering bases 74 and 86 together using a glue adhesive or other fastening means.

FIGS. 4 and 5 show, respectively, first and second steps of a multi-step conditioning process employing conditioner hybrid 50 of FIGS. 1-3 to condition the surface of pad 21. FIG. 4 shows a first step, a pre-conditioning process in which conditioning assembly 30 (FIG. 1) uses a downforce F₃ that is sufficiently high, such as between about two PSI (13789.5 Pa) and about six PSI (41368.5 Pa), to bring both bristles 90 and pedestals 80 in contact with pad 21. Although brush bristles 90 and abrasive pedestals 80 contact pad 21, diamond-coated (or other) abrasives are the major contributors to higher aggressiveness and pad cut rate (PCR) during the pre-conditioning process. In a second step (FIG. 5), however, due to relatively lower downforce F₄, only brush bristles 90 are brought into the contact with pad 21. The second step is used, for example, for in situ conditioning. Accordingly, in situ conditioning is performed using a regular PCR as the downforce F₄ is reduced, for example, to four PSI (27579 Pa). Thus, conditioner hybrid 50 provides capability for increased PCR during pre-conditioning, and switching to regular PCR without manual changing of a conditioner brush with a conditioner disk.

FIG. 6 shows a conditioner hybrid 100 according to another embodiment in which longitudinal axes of brush bristles 110 are oriented at an angle, relative to a plane parallel with the surface of pad 21. In other words, brush bristles 110 in the nominal condition define an angle with the surface that is noticeably less than 90 degrees. Brush bristles 110 in the nominal state are therefore not substantially perpendicular to the pad surface. As shown in FIG. 7, the angle helps reduce force used to flex the brush bristles 110 out of the way during the pre-conditioning step.

FIG. 7 shows a force diagram for a brush bristle 120 of conditioner hybrid 100 in which a downforce F₅ is applied to the brush bristle 120 during the pre-conditioning step. During the pre-conditioning process, conditioning assembly 30 (FIG. 1) uses downforce F₅, which is sufficiently strong to bring abrasive pedestals into contact with pad 21, while bristles 110 (FIG. 6), under components F_(x) and F_(y) of downforce F₅, are forced to move horizontally or laterally relative to the surface of pad 21. In other words, because terminal ends of brush bristles 110 readily bend to horizontal X and Y directions, they provide minimal or no contribution to pad pre-conditioning; pad pre-conditioning is thereby performed by abrasive regions that significantly reduce pad break-in time over the alternatives of using just bristles or swapping disks. Accordingly, angled brush bristles 110 take minimal or no role in pad pre-conditioning, and F₅ is typically less than F₃ (FIG. 4). Moreover, as described previously, during a later step of restoration (e.g., in situ conditioning), downforce F₅ is further reduced such that bristles 110 return to a straighter position for in situ conditioning. In this position, pedestals are removed from the contact with the surface of pad 21, and conditioning is performed by brush bristles 110 at a regular PCR.

Experimental Results

To demonstrate advantages of a conditioner hybrid used for pre-conditioning, experiments were performed showing how a pad preparation process could use abrasives to speed up processes formerly using only brushes for pre-conditioning. The concept was verified using a proprietary polishing process, as well as a research-grade CMP tool for polishing 300 mm wafers. Experiments were performed both at an Intel factory using a high volume manufacturing (HVM) polisher and metrology tools, and in a CMP lab using the research-grade 300 mm wafer polisher. Under the factory tests, accelerated break-in (i.e., pre-conditioning) of a poromeric pad was performed using a conditioner disk, which was found to save approximately six hours per pad change, or 36 hours of tool time per week. Removal rate and wafer defects (defects determined during wafer polishing using the pad, pre-conditioned per the described process) were, mostly, within the process control limits. Pad roughness was measured using a white light spectrometer.

In an HVM standard procedure, both pre-conditioning and in situ conditioning of a poromeric Fujibo pad, available from Fujibo Holdings, Inc. of Tokyo, Japan, were performed using a conditioner brush. Pre-conditioning using a conditioner brush may take many minutes or hours. To establish target values for Fujibo pad conditioning, pad roughness was measured after the pad was conditioned for a process-specific duration using the HVM tool. Then, to accelerate the pre-conditioning process, the tests used a Morgan conditioner disk available from Morgan Advanced Materials of Windsor, U.K., and measured Fujibo pad roughness after pre-conditioning for 5, 10, and 15 minutes at downforce of two, four, and six PSI. Additionally, fixed zone and regular HVM sweep conditioning were compared, as were conditioning in deionized water (DIW) and HVM slurry. In all of the above experiments, after the conditioning by the Morgan conditioner disk, Fujibo pad roughness was measured using a non-contact tool white light spectrometer. Table 1 summarizes consumables and criteria used during testing.

TABLE 1 Conditioning Fujibo pads using Morgan conditioner disk Three-zone conditioning and regular sweep Disk downforces of two, four, and six PSI Three durations tested for each downforce: 5, 10, and 15 minutes Conditioning in DIW or, for sweep, in slurry APCI Cu4545 Polishing tools: Factory polishing tool Research-grade 300 mm polishing tool White light spectrometer to measure pad surface roughness Factory metrology tools to measure wafer defectivity and removal rate

FIGS. 8 and 9 show, at two and four PSI downforce, roughness comparisons—both in terms of Ra (left side) and Rq (right side)—between a CMP pad pre-conditioned using a conventional conditioner brush (at proprietary downforce and process time) and a CMP pad pre-conditioned using a Morgan conditioner disk (at the respective downforce for 5, 10, and 15 minute process times). Similarly, FIG. 10 shows a roughness comparison—both in terms of Ra (left side) and Rq (right side)—between a CMP pad pre-conditioned using a conventional conditioner brush and a CMP pad pre-conditioned using a Morgan condition disk at downforces of two, four, and six PSI for 15 minutes time. As seen in FIG. 10, pad roughness after pre-conditioning with the Morgan conditioner disk at six PSI for 15 minutes exceeds pad roughness after pre-conditioning with an HVM brush. The statistical plots and data are renderings of analysis derived from the JMP (pronounced “jump”) computer program for statistics developed by the JMP business unit of SAS Institute.

FIGS. 11-13 indicate that, to reach the roughness values (Ra≈40 μm and Rq≈50 μm) that are the target values for a conventional conditioner brush at the pad end of life, three experimental results of FIGS. 8-10 (corresponding to two, four, and six PSI) are readily extrapolated as follows. First, FIG. 11 indicates that, upon extrapolation of the results of FIG. 8, a Morgan conditioner disk (at two PSI) may be used to pre-condition for a range of time of about 30 to 35 minutes. Second, FIG. 12 indicates that, upon extrapolation of the results of FIG. 9, a Morgan conditioner disk (at four PSI) may be used to pre-condition for a range of time of about 22 to 30 minutes. Third, FIG. 13 indicates that, upon extrapolation of the results of FIG. 10, a Morgan conditioner disk (at six PSI) may be used to pre-condition for about 12 minutes. These extrapolated findings are also summarized in Tables 2 and 3. Specifically, Table 2 shows target surface roughness values for conventional conditioning with the conditioner brush. Table 3 summarizes times desired to achieve target roughness values using a Morgan conditioner disk and time reduction as compared to a process of records (POR) process.

TABLE 2 Target surface roughness values obtained after pad HVM conditioning using conditioner brush. Target Ra, Rq per conventional process: Brush + wafer Ra (μm) Rq (μm) Time (min) 40 50 160

TABLE 3 Summary of conditioning time used to achieve target pad roughness values using conditioner disk. two PSI four PSI six PSI Time to achieve target 30 to 35 22 to 30 About 12 Ra, Rq values (min) Time reduction 4.6× 5.3× 8.9× compared to POR

FIG. 14 shows dependency of time to achieve target pad surface roughness after conditioning using a conditioner disk. The time to achieve target pad surface roughness values using the conditioner disk decreases in nonlinear manner with an increase of conditioning downforce. Per Table 3 and FIG. 14, conditioning at six PSI provides the fastest acceleration of the pre-conditioning process, and downforce of six PSI was selected for HVM gross reality check (GRC) tests.

GRC HVM tests demonstrated saving time on pre-conditioning process/increase tool availability time by 36 hours per week, while wafer removal rate and wafer defects were, mostly, within control limits of the process. Pre-conditioning using a conditioner disk instead of a POR conditioner brush significantly reduces pre-conditioning time, as compared to the POR process based on using the conditioner brush. Time to achieve target values decreases with increase of conditioning downforce.

EXAMPLE EMBODIMENTS

1. A chemical-mechanical planarization (CMP) pad conditioner, comprising: a base having a major surface; an abrasive portion depending from the major surface and having an abrasive surface parallel to the major surface; and a brush portion affixed to the major surface so as to substantially encompass the abrasive portion, the brush portion having brush bristles depending away from the major surface to define a brush surface, in which, in a CMP pad pre-conditioning configuration, the brush surface is compressible so as to be at a first height that is substantially similar to that of the abrasive surface, and, in a CMP pad restoration configuration, the brush surface is substantially uncompressed so as to be at a height that extends past that of the abrasive surface.

2. The CMP pad conditioner of example 1, in which the brush bristles comprise angled bristles.

3. The CMP pad conditioner of example 1, in which the brush bristles comprise straight bristles.

4. The CMP pad conditioner of any of examples 1-3, in which the brush bristles comprise nylon bristles.

5. The CMP pad conditioner of example 1, in which the abrasive surface is configured to contact a polishing pad in response to a force applied to flex the brush bristles.

6. The CMP pad conditioner of example 5, in which the force that configures the abrasive surface to contact the polishing pad is between about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) and about six PSI, 34473.8 Pa.

7. The CMP pad conditioner of example 5 or 6, in which the force is about six PSI, 34473.8 Pa.

8. The CMP pad conditioner of example 1, in which the base comprises a ceramic base.

9. A system for polishing a surface of a workpiece, the system comprising:

a chemical-mechanical planarization (CMP) polishing pad having a pad surface; a pad conditioning assembly; and a CMP pad conditioner brush-and-abrasive hybrid tool comprising: an abrasive portion depending toward the pad surface and having an abrasive surface parallel to the pad surface; and a brush portion in a region of the CMP pad conditioner brush-and-abrasive hybrid tool adjacent the abrasive portion, the brush portion having brush bristles depending toward the pad surface to define a brush surface, in which, in a CMP pad pre-conditioning configuration, the brush surface is under a first force to press the abrasive surface against the pad surface such that the brush bristles flex to move the brush surface to be at a first height that is substantially similar to that of the abrasive surface, and, in a CMP pad restoration configuration, the brush surface is under a second force less than the first force to maintain the abrasive portion in a recessed position relative to the brush portion, and the brush surface is at a second height that extends past that of the abrasive surface.

10. The system of example 9, in which the brush bristles comprise angled bristles.

11. The system of example 9, in which the brush bristles comprise straight bristles.

12. The system of any of examples 9-11, in which the brush bristles comprise nylon bristles configured to flex under downforce applied by the pad conditioning assembly.

13. The system of example 9, in which the abrasive surface is configured to contact the pad surface in response to a force applied to flex the brush bristles.

14. The system of example 13, in which the force that configures the abrasive surface to contact the pad surface is between about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) and about six PSI, 34473.8 Pa.

15. The system of example 13 or 14, in which the force is about six PSI, 34473.8 Pa.

16. The system of example 9, in which the abrasive portion comprises a plurality of ceramic disks.

17. A method of reducing tool time by preparing and restoring a chemical-mechanical planarization (CMP) pad using a CMP pad conditioner brush-and-abrasive hybrid tool, the method comprising: preparing the CMP pad using a disk portion of the CMP pad conditioner brush-and-abrasive hybrid tool by applying a first downforce to the CMP pad conditioner brush-and-abrasive hybrid tool; and restoring the CMP pad using a brush portion of the CMP pad conditioner brush-and-abrasive hybrid tool by applying a second downforce to the CMP pad conditioner brush-and-abrasive hybrid tool, the second downforce being less than the first downforce such that the disk portion does not contact the CMP pad during the restoring.

18. The method of example 17, further comprising restoring the CMP pad by conditioning in situ during a polishing process.

19. The method of example 17, further comprising restoring the CMP pad by conditioning intermittently between conditioning and polishing steps of a polishing process.

20. The method of any of examples 17-19, further comprising preparing the CMP pad by pre-conditioning for a duration of about 12 to about 35 minutes under about two pounds-force per square inch (PSI) 13789.5, Pascal (Pa) to about six PSI, 34473.8 Pa.

21. The method of example 17, in which the first downforce is about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) to about six PSI, 34473.8 Pa.

22. The method of example 17, in which the brush portion includes non-straight bristles.

23. The method of example 17, in which the brush portion includes substantially straight bristles.

24. An apparatus for reducing tool time during a multi-step process of conditioning a chemical-mechanical planarization (CMP) pad, the apparatus comprising: means for pre-conditioning the CMP pad using an abrasive portion of a CMP pad conditioner; and means for restoring the CMP pad using a brush portion of the CMP pad conditioner.

25. The apparatus of example 24, further comprising means for restoring the CMP pad by conditioning in situ during a polishing process.

26. The apparatus of example 24, further comprising means for restoring the CMP pad by conditioning intermittently between conditioning and polishing steps of a polishing process.

27. The apparatus of any of examples 24-26, further comprising means for preparing the CMP pad by pre-conditioning for a duration of about 12 to about 35 minutes under about two pounds-force per square inch (PSI) 13789.5, Pascal (Pa) to about six PSI, 34473.8 Pa.

28. The apparatus of example 17, in which the brush portion includes non-straight bristles.

29. The apparatus of example 17, in which the brush portion includes substantially straight bristles.

Skilled persons will understand that many changes may be made to the details of the above-described embodiments without departing from the underlying principles of the disclosure. The scope of the present invention should, therefore, be determined according to claims. 

1. A chemical-mechanical planarization (CMP) pad conditioner, comprising: a base having a major surface; an abrasive portion depending from the major surface and having an abrasive surface parallel to the major surface; and a brush portion affixed to the major surface so as to substantially encompass the abrasive portion, the brush portion having brush bristles depending away from the major surface to define a brush surface, in which, in a CMP pad pre-conditioning configuration, the brush surface is compressible so as to be at a first height that is substantially similar to that of the abrasive surface, and, in a CMP pad restoration configuration, the brush surface is substantially uncompressed so as to be at a height that extends past that of the abrasive surface.
 2. The CMP pad conditioner of claim 1, in which the brush bristles comprise angled bristles.
 3. The CMP pad conditioner of claim 1, in which the brush bristles comprise straight bristles.
 4. The CMP pad conditioner of claim 1, in which the brush bristles comprise nylon bristles.
 5. The CMP pad conditioner of claim 1, in which the abrasive surface is configured to contact a polishing pad in response to a force applied to flex the brush bristles.
 6. The CMP pad conditioner of claim 5, in which the force that configures the abrasive surface to contact the polishing pad is between about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) and about six PSI, 34473.8 Pa.
 7. The CMP pad conditioner of claim 5, in which the force is about six PSI, 34473.8 Pa.
 8. The CMP pad conditioner of claim 1, in which the base comprises a ceramic base.
 9. A system for polishing a surface of a workpiece, the system comprising: a chemical-mechanical planarization (CMP) polishing pad having a pad surface; a pad conditioning assembly; and a CMP pad conditioner brush-and-abrasive hybrid tool comprising: an abrasive portion depending toward the pad surface and having an abrasive surface parallel to the pad surface; and a brush portion in a region of the CMP pad conditioner brush-and-abrasive hybrid tool adjacent the abrasive portion, the brush portion having brush bristles depending toward the pad surface to define a brush surface, in which, in a CMP pad pre-conditioning configuration, the brush surface is under a first force to press the abrasive surface against the pad surface such that the brush bristles flex to move the brush surface to be at a first height that is substantially similar to that of the abrasive surface, and, in a CMP pad restoration configuration, the brush surface is under a second force less than the first force to maintain the abrasive portion in a recessed position relative to the brush portion, and the brush surface is at a second height that extends past that of the abrasive surface.
 10. The system of claim 9, in which the brush bristles comprise angled bristles.
 11. The system of claim 9, in which the brush bristles comprise straight bristles.
 12. The system of claim 9, in which the brush bristles comprise nylon bristles configured to flex under downforce applied by the pad conditioning assembly.
 13. The system of claim 9, in which the abrasive surface is configured to contact the pad surface in response to a force applied to flex the brush bristles.
 14. The system of claim 13, in which the force that configures the abrasive surface to contact the pad surface is between about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) and about six PSI, 34473.8 Pa.
 15. The system of claim 13, in which the force is about six PSI, 34473.8 Pa.
 16. The system of claim 9, in which the abrasive portion comprises a plurality of ceramic disks.
 17. A method of reducing tool time by preparing and restoring a chemical-mechanical planarization (CMP) pad using a CMP pad conditioner brush-and-abrasive hybrid tool, the method comprising: preparing the CMP pad using a disk portion of the CMP pad conditioner brush-and-abrasive hybrid tool by applying a first downforce to the CMP pad conditioner brush-and-abrasive hybrid tool; and restoring the CMP pad using a brush portion of the CMP pad conditioner brush-and-abrasive hybrid tool by applying a second downforce to the CMP pad conditioner brush-and-abrasive hybrid tool, the second downforce being less than the first downforce such that the disk portion does not contact the CMP pad during the restoring.
 18. The method of claim 17, further comprising restoring the CMP pad by conditioning in situ during a polishing process.
 19. The method of claim 17, further comprising restoring the CMP pad by conditioning intermittently between conditioning and polishing steps of a polishing process.
 20. The method of claim 17, further comprising preparing the CMP pad by conditioning for a duration of about 12 to about 35 minutes under about two pounds-force per square inch (PSI) 13789.5, Pascal (Pa) to about six PSI, 34473.8 Pa.
 21. The method of claim 17, in which the first downforce is about two pounds-force per square inch (PSI), 13789.5 Pascal (Pa) to about six PSI, 34473.8 Pa.
 22. The method of claim 17, in which the brush portion includes non-straight bristles.
 23. The method of claim 17, in which the brush portion includes substantially straight bristles. 